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| INTEGRATED CIRCUITS DATA SHEET TZA3001AHL; TZA3001BHL; TZA3001U SDH/SONET STM4/OC12 laser drivers Preliminary specification Supersedes data of 1997 Sep 08 File under Integrated Circuits, IC19 1999 Aug 24 Philips Semiconductors Preliminary specification SDH/SONET STM4/OC12 laser drivers FEATURES * 622 Mbits/s data input, both Current-Mode Logic (CML) and Positive Emitter Coupled Logic (PECL) compatible; maximum 800 mV (p-p) * Adaptive laser output control with dual loop, stabilizing optical ONE and ZERO levels * Optional external control of laser modulation and biasing currents (non-adaptive) * Automatic laser shutdown * Few external components required * Rise and fall times of 120 ps (typical value) * Jitter <50 mUI (p-p) * RF output current sinking capability of 60 mA * Bias current sinking capability of 90 mA * Power dissipation of 430 mW (typical value) * Low cost LQFP32 plastic package * Single 5 V power supply. TZA3001AHL * Laser alarm output for signalling extremely low and high bias current conditions. TZA3001BHL * Extra STM4 622 Mbits/s loop mode input; both CML and PECL compatible. TZA3001U * Bare die version with combined bias alarm and loop mode functionality. ORDERING INFORMATION TYPE NUMBER TZA3001AHL TZA3001BHL TZA3001U - bare die; 2000 x 2000 x 380 m TZA3001AHL; TZA3001BHL; TZA3001U APPLICATIONS * SDH/SONET STM4/OC12 optical transmission systems * SDH/SONET STM4/OC12 optical laser modules. GENERAL DESCRIPTION The TZA3001AHL, TZA3001BHL and TZA3001U are fully integrated laser drivers for STM4/OC12 (622 Mbits/s) systems, incorporating the RF path between the data multiplexer and the laser diode. Since the dual loop bias and modulation control circuits are integrated on the IC, the external component count is low. Only decoupling capacitors and adjustment resistors are required. The TZA3001AHL features an alarm function for signalling extreme bias current conditions. The alarm low and high threshold levels can be adjusted to suit the application using only a resistor or a current Digital-to-Analog Converter (DAC). The TZA3001BHL is provided with an additional RF data input to facilitate remote (loop mode) system testing. The TZA3001U is a bare die version for use in compact laser module designs. The die contains 40 pads and features the combined functionality of the TZA3001AHL and the TZA3001BHL. PACKAGE NAME LQFP32 DESCRIPTION plastic low profile quad flat package; 32 leads; body 5 x 5 x 1.4 mm VERSION SOT401-1 - 1999 Aug 24 2 Philips Semiconductors Preliminary specification SDH/SONET STM4/OC12 laser drivers BLOCK DIAGRAM TZA3001AHL; TZA3001BHL; TZA3001U handbook, full pagewidth ALARM TONE TZERO ALARMLO ALARMHI 26 4 5 21 LASER CONTROL BLOCK data input (differential) 18 2 22 23 13 MONIN ONE ZERO LA LAQ BIAS DIN DINQ 28 29 CURRENT SWITCH 12 15 TZA3001AHL 19, 20 27, 30 4 VCC(R) VCC(G) VCC(B) ALS BAND GAP REFERENCE 6 BGAP 7 10 31 1, 3, 8, 9, 11, 14, 16, 17 24, 25, 32 11 GND MGK271 Fig.1 Block diagram of TZA3001AHL. handbook, full pagewidth ENL 26 TONE 4 TZERO 5 LASER CONTROL BLOCK 2 22 23 13 MONIN ONE ZERO LA LAQ BIAS DIN DINQ DLOOP DLOOPQ 28 29 19 20 BAND GAP REFERENCE 6 MUX CURRENT SWITCH 12 15 BGAP TZA3001BHL 18, 21 27, 30 4 VCC(R) VCC(G) VCC(B) ALS 7 10 31 1, 3, 8, 9, 11, 14, 16, 17 24, 25, 32 11 GND MGK270 Fig.2 Block diagram of TZA3001BHL. 1999 Aug 24 3 Philips Semiconductors Preliminary specification SDH/SONET STM4/OC12 laser drivers PINNING PIN SYMBOL TZA3001AHL TZA3001BHL GND MONIN GND IGM TONE TZERO BGAP VCC(G) VCC(G) GND GND VCC(B) VCC(B) GND LAQ LA GND BIAS GND GND GND ALARMHI VCC(R) VCC(R) DLOOP VCC(R) DLOOPQ VCC(R) ALARMLO VCC(R) ONE ZERO GND GND ALARM ENL VCC(R) 1999 Aug 24 1 2 3 - 4 5 6 7 - 8 9 10 - 11 12 13 14 15 16 17 - 18 - 19 - 20 - - 21 - 22 23 24 25 26 - 27 1 2 3 - 4 5 6 7 - 8 9 10 - 11 12 13 14 15 16 17 - - 18 - 19 - 20 - - 21 22 23 24 25 - 26 27 TZA3001U 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 - 24 - 25 26 27 - 28 29 30 31 32 33 34 4 ground PAD TZA3001AHL; TZA3001BHL; TZA3001U DESCRIPTION monitor photodiode current input ground not used; leave unbonded connection for external capacitor used to set optical ONE control loop time constant (optional) connection for external capacitor used to set optical ZERO control loop time constant (optional) connection for external band gap decoupling capacitor supply voltage (green domain) supply voltage (green domain) ground ground supply voltage (blue domain) supply voltage (blue domain) ground laser modulation output inverted laser modulation output ground laser bias current output ground ground ground maximum bias current alarm reference level input supply voltage (red domain) supply voltage (red domain) loop mode data input supply voltage (red domain) loop mode data input inverted supply voltage (red domain) minimum bias current alarm reference level input supply voltage (red domain) optical ONE reference level input optical ZERO reference level input ground ground alarm output loop mode enable input supply voltage (red domain) Philips Semiconductors Preliminary specification SDH/SONET STM4/OC12 laser drivers TZA3001AHL; TZA3001BHL; TZA3001U PIN SYMBOL TZA3001AHL TZA3001BHL DIN DINQ VCC(R) ALS GND GND 28 29 30 31 32 - 28 29 30 31 32 - PAD DESCRIPTION TZA3001U 35 36 37 38 39 40 data input data input inverted supply voltage (red domain) automatic laser shutdown input ground ground 27 VCC(R) 30 VCC(R) 29 DINQ handbook, full pagewidth 26 ALARM 25 GND 32 GND 31 ALS 28 DIN GND MONIN GND TONE TZERO BGAP VCC(G) GND 1 2 3 4 24 GND 23 ZERO 22 ONE 21 ALARMLO TZA3001AHL 5 6 7 8 20 VCC(R) 19 VCC(R) 18 ALARMHI 17 GND VCC(B) 10 GND 11 LAQ 12 LA 13 GND 14 BIAS 15 GND 16 GND 9 MGK273 Fig.3 Pin configuration of TZA3001AHL. 1999 Aug 24 5 Philips Semiconductors Preliminary specification SDH/SONET STM4/OC12 laser drivers TZA3001AHL; TZA3001BHL; TZA3001U 27 VCC(R) 30 VCC(R) 29 DINQ 26 ENL 31 ALS 28 DIN handbook, full pagewidth 25 GND 32 GND GND MONIN GND TONE TZERO BGAP VCC(G) GND 1 2 3 4 5 6 7 8 24 GND 23 ZERO 22 ONE TZA3001BHL 21 VCC(R) 20 DLOOPQ 19 DLOOP 18 VCC(R) 17 GND VCC(B) 10 GND 11 LAQ 12 LA 13 GND 14 BIAS 15 GND 16 GND 9 MGK272 Fig.4 Pin configuration of TZA3001BHL. FUNCTIONAL DESCRIPTION The TZA3001AHL, TZA3001BHL and TZA3001U laser drivers accept a 622 Mbits/s STM4 Non-Return to Zero (NRZ) input data stream and generate an output signal with sufficient current to drive a solid state Fabry Perot (FP) or Distributed FeedBack (DFB) laser. They also contain dual loop control circuitry for stabilizing the true laser optical power levels representing logic 1 and logic 0. The input buffers present a high impedance to the data stream on the differential inputs (pins DIN and DINQ). The input signal can be at CML level of approximately 200 mV (p-p) below the supply voltage, or at PECL level up to 800 mV (p-p). The inputs can be configured to accept CML signals by connecting external 50 pull-up resistors between pins DIN and DINQ to VCC(R). If PECL compatibility is required, the usual Thevenin termination can be applied. For ECL signals (negative and referenced to ground) the inputs should be AC-coupled to the signal source. If AC-coupling is applied, a constant input signal (either low of high) will bring the device in an undefined state. To avoid this, it is recommended to apply a slight offset to the input stage. The applied offset must be higher than the specified value in Chapter "Characteristics", but much lower than the applied input voltage swing. 1999 Aug 24 6 The RF path is fully differential and contains a differential preamplifier and a main amplifier. The main amplifier is designed to handle large peak currents required at the output laser driving stage and is insensitive to supply voltage variations. The output signal from the main amplifier drives a current switch which supplies a guaranteed maximum modulation current of 60 mA at pins LA and LAQ. Pin BIAS delivers a guaranteed maximum DC bias current of up to 90 mA for adjusting the optical laser output to a level above its light emitting threshold. Automatic laser control A laser with a Monitor PhotoDiode (MPD) is required for the laser control circuit (see Figs 6 and 7). The MPD current is proportional to the laser emission and is applied to pin MONIN. The MPD current range is from 100 to 1000 A (p-p). The input buffer is optimized to cope with MPD capacitances up to 50 pF. To prevent the input buffer breaking into oscillation with a low MPD capacitance, it is required to increase the capacitance to the minimum value specified in Chapter "Characteristics" by connecting an extra capacitor between pin MONIN and VCC(G). Philips Semiconductors Preliminary specification SDH/SONET STM4/OC12 laser drivers DC reference currents are applied to pins ZERO and ONE to set the MPD reference levels for laser LOW and laser HIGH. A resistor connected between pin ZERO and VCC(R) and a resistor connected between pin ONE and VCC(R) is sufficient, but current DACs can also be used. The voltages on pins ZERO and ONE are held constant at a level of 1.5 V below VCC(R). The reference current applied to pin ZERO is multiplied by 4 and the reference current flowing into pin ONE is multiplied internally by 16. The reference current and the resistor for the optical ONE regulation loop (modulation current control) can be calculated using the following formulae: 1 I ONE = ----- x I MPD (ONE) [A] (1) 16 24 1.5 R ONE = ---------- = ------------------------I MPD (ONE) I ONE [] (2) TZA3001AHL; TZA3001BHL; TZA3001U It should be noted that the MPD current is stabilized, rather than the actual laser optical output power. Deviations between optical output power and MPD current, known as `tracking errors', cannot be corrected. Designing the modulation and bias loop The optical ONE and ZERO regulation loop time constants are determined by on-chip capacitances. If the resulting time constants are found to be too small in a specific application, they can be increased by connecting external capacitors to pins TZERO and TONE, respectively. The optical ONE loop time constant and bandwidth can be estimated using the following formulae: ONE = ( 40 x 10 - 12 80 x 10 + C TONE ) x -------------------- LASER [ Hz ] 3 [s] (5) The reference current and resistor for the optical ZERO regulation loop (bias current control) can be calculated using the following formulae: 1 [A] I ZERO = -- x I MPD (ZERO) (3) 4 1.5 6 R ZERO = ------------- = --------------------------I ZERO I MPD (ZERO) [] (4) 1 B ONE = ------------------------2 x ONE (6) LASER B ONE = ------------------------------------------------------------------------------------------------ 12 3 2 x ( 40 x 10 + C TONE ) x 80 x 10 The optical ZERO loop time constant and bandwidth can be estimated using the following formulae: ZERO = ( 40 x 10 - 12 In these formulae, IMPD(ONE) and IMPD(ZERO) represent the monitor photodiode current during an optical ONE and an optical ZERO, respectively. Example: A laser is operating at optical output power levels of 0.3 mW for laser HIGH and 0.03 mW for laser LOW (extinction ratio of 10 dB). Suppose the corresponding MPD currents for this type of laser are 260 and 30 A, respectively. In this example the reference current is 1 I ONE = ----- x 260 = 16.25 A and flows into pin ONE. 16 This current can be set using a current source or simply by a resistor of the appropriate value connected between pin ONE and VCC(R). In this example the resistor would be 1.5 R ONE = --------------- = 92.3 k 16.25 The reference current at pin ZERO in this example is 1 I ZERO = -- x 30 = 7.5 A and can be set using a resistor 4 1.5 R ZERO = --------- = 200 k 7.5 50 x 10 + C TZERO ) x -------------------- LASER [ Hz ] 3 [s] (7) 1 B ZERO = --------------------------2 x ZERO (8) LASER B ZERO = --------------------------------------------------------------------------------------------------- 12 3 2 x ( 40 x 10 + C TZERO ) x 50 x 10 The term LASER (dimensionless) in the above formulae is the product of the two terms: * EO is the electro-optical efficiency which accounts for the steepness of the laser slope. It is the amount of the extra optical output power in W/A of modulation current optical output power. * R is the monitor photodiode responsivity. It is the amount of the extra monitor photodiode current in A/W optical output power. 1999 Aug 24 7 Philips Semiconductors Preliminary specification SDH/SONET STM4/OC12 laser drivers Example: A laser with an MPD has the following specifications: PO = 1 mW, Ith = 25 mA, EO = 30 mW/A, R = 500 mA/W. The term Ith is the required threshold current to switch-on the laser. If the laser operates just above the threshold level, it may be assumed that EO around the optical ZERO level is 50% of EO around the optical ONE level, due to the decreasing slope near the threshold level. In this example the resulting bandwidth for the optical ONE regulation loop, without external capacitance, would be: 30 x 10 x 500 x 10 B ONE = -------------------------------------------------------------------- 750 Hz - 12 3 2 x 40 x 10 x 80 x 10 The resulting bandwidth for the optical ZERO regulation loop, without external capacitance, would be: 0.5 x 30 x 10 x 500 x 10 B ZERO = ------------------------------------------------------------------------- 600 Hz - 12 3 2 x 40 x 10 x 50 x 10 It is not necessary to add additional capacitance with this type of laser. Data pattern and bit rate dependency of the control loop The constants in Equations (1) and (3) are valid, provided a frequent presence of sufficiently long runs of `constant zero' and `constant one'. The longest run of zeros and ones, occurring typically within a single loop time period (ONE and ZERO), must be at least approximately 6 ns (e.g. as provided by the A1/A2 frame alignment bytes for STM4/OC12). In practice, it can be witnessed that the optical extinction ratio will increase if the bit rate is increased. Therefore it is important to use the actual data patterns and bit rate of the final application circuit for adjusting the optical levels. Monitoring the bias and modulation current Although not recommended, the bias and modulation currents generated by the laser driver can be monitored by measuring the voltages on pins TZERO and TONE, respectively. The relations between these voltages and the corresponding currents are given as transconductance values and are specified in Chapter "Characteristics". The voltages on pins TZERO and TONE range from 1.4 to 3.4 V. The impedance connected at these pins should have an extremely high value. It is mandatory to use a CMOS buffer or an amplifier with an input impedance higher than 100 G and an extremely low input leakage current (pA range). -3 -3 -3 -3 TZA3001AHL; TZA3001BHL; TZA3001U Manual laser override The automatic laser control function can be overridden by connecting voltage sources to pins TZERO and TONE to take direct control of, respectively, the bias current source and the modulation current source. The control voltages should be in the range from 1.4 to 3.4 V to sweep the modulation current through the range from 1 to 60 mA and the bias current through the range from 1 to 90 mA. These current ranges are guaranteed. Depending on the temperature and manufacturing process spread, current values higher than the specified ranges can be achieved. However, bias and modulation currents in excess of the specified range are not supported and should be avoided. Currents into or out pins TZERO and TONE in excess of 10 A must be avoided to prevent damage of the circuit. Automatic laser shut-down and laser slow start The laser modulation and bias currents can be rapidly switched off when a HIGH-level (CMOS) is applied to pin ALS. This function allows the circuit to be shut-down in the event of an optical system malfunction. A 25 k pull-down resistor defaults the input of pin ALS to the non active state. When a LOW-level is applied to pin ALS, the modulation and bias current slowly increase to the desired values with the typical time constants of ONE and ZERO, respectively. This can be used as a laser slow start. Bias alarm for TZA3001AHL The bias current alarm circuit detects and flags whenever the bias current is outside a predefined range. This feature can detect excessive bias current due to laser aging and laser malfunctioning. The maximum permitted bias current should be applied to pin ALARMHI with an attenuation ratio of 1500; the minimum to pin ALARMLO with an attenuation ratio of 300. Like the reference currents for the laser current control loop, the alarm reference currents can be set using external resistors connected between pins ALARMHI or ALARMLO and VCC(R). The resistor values can be calculated using the following formulae: 1.5 x 1500 R ALARMHI = --------------------------[] (9) I BIAS(max) 1.5 x 300 R ALARMLO = ----------------------I BIAS(min) [] (10) 1999 Aug 24 8 Philips Semiconductors Preliminary specification SDH/SONET STM4/OC12 laser drivers Example: The following reference currents are required to limit the bias current range between 6 and 90 mA: 6 mA I ALARMLO = ------------- = 20 A and 300 90 mA I ALARMHI = ---------------- = 60 A 1500 The corresponding resistor values are: 1.5 V x 1500 R ALARMHI = -------------------------------- = 25 k and 90 mA 1.5 V x 300 R ALARMLO = ----------------------------- = 75 k 6 mA If the alarm condition is true, the voltage on pin ALARM goes to HIGH-level (CMOS). This signal could be used, for example, to disable the laser driver by driving pin ALS (a latch is needed in between to prevent oscillation). Loop mode for TZA3001BHL In the loop mode the total system application can be tested. It allows for uninhibited optical transmission through the fibre front-end (from the photodiode through the transimpedance stage and the data and clock recovery unit, to the laser driver and via the laser back to the fibre). It should be noted that the optical receiver used in conjunction with the TZA3001BHL must have a loop mode output in order to complete the test loop. A HIGH-level on pin ENL selects the loop mode. By default pin ENL is pulled at LOW-level by a 25 k pull-down resistor. Power supply connections Three separate supply domains [labelled VCC(B), VCC(G) and VCC(R)] are used to provide isolation between the high-current outputs, the PECL or CML inputs, and the monitor photodiode current input. The three domains should be individually filtered before being connected to a central VCC (see Figs 6 and 7). All supply pins need to be connected. The supply levels should be equal and in accordance with the values specified in Chapter "Characteristics". TZA3001AHL; TZA3001BHL; TZA3001U To maximize power supply isolation, the MPD cathode on the laser should be connected to VCC(G) and the laser diode anode to VCC(B). It is recommended to provide the laser anode with a separate decoupling capacitor C11. The inverted laser driver modulation pin LAQ is generally not used. To properly balance the output stage, an equalization network Z1 with an impedance comparable to the laser is connected between pin LAQ and VCC(B). All external components should be SMD, preferably of size 0603 or smaller. The components must be mounted as close to the IC as possible. It is specially recommended to mount the following components very close to the IC: * Power supply decoupling capacitors C2, C4 and C6 * Input matching network on pins DIN and DINQ * Capacitor C7 on pin MONIN * Output matching network Z1 at the unused output. Grounding bare die In addition to the separate VCC domains, the bare die contains three corresponding ground domains. Isolation between the GND domains is limited due to the finite substrate conductance. Mount the die on a, preferably large and highly conductive, grounded die pad. All pads GND have to be bonded to the die pad. The external ground is thus optimally combined with the die ground, avoiding ground bouncing problems. Layout recommendations Layout recommendations for the TZA3001AHL and TZA3001BHL can be found in application note "AN98090 Fiber optic transceiverboard STM1/4/8, OC3,12,24, FC/GE". 1999 Aug 24 9 Philips Semiconductors Preliminary specification SDH/SONET STM4/OC12 laser drivers LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VCC Vn supply voltage DC voltage on pin MONIN pins TONE and TZERO pin BGAP pin BIAS pins LA and LAQ pin ALS pins ONE and ZERO pins DIN and DINQ pin ALARM pins ALARMHI and ALARMLO pins DLOOP and DLOOPQ pin ENL In DC current on pin MONIN pins TONE and TZERO pin BGAP pin BIAS pins LA and LAQ pin ALS pins ONE and ZERO pins DIN and DINQ pin ALARM pins ALARMHI and ALARMLO pins DLOOP and DLOOPQ pin ENL Tamb Tj Tstg ambient temperature junction temperature storage temperature PARAMETER TZA3001AHL; TZA3001BHL; TZA3001U CONDITIONS MIN. -0.5 1.3 -0.5 -0.5 -0.5 1.3 -0.5 -0.5 -0.5 MAX. +6 VCC + 0.5 VCC + 0.5 +3.2 VCC + 0.5 VCC + 0.5 VCC + 0.5 VCC + 0.5 VCC + 0.5 VCC + 0.5 VCC + 0.5 VCC + 0.5 VCC + 0.5 +2.5 +0.5 +2.5 +200 +100 +0.5 +0.5 +0.5 +10 +0.5 +0.5 +0.5 +85 +125 +150 UNIT V V V V V V V V V V V V V mA mA mA mA mA mA mA mA mA mA mA mA C C C TZA3001AHL TZA3001AHL TZA3001BHL TZA3001BHL -0.5 -0.5 -0.5 -0.5 -0.5 -0.5 -2.0 -0.5 -0.5 -0.5 -0.5 -0.5 TZA3001AHL TZA3001AHL TZA3001BHL TZA3001BHL -0.5 -0.5 -0.5 -0.5 -40 -40 -65 THERMAL CHARACTERISTICS SYMBOL Rth(j-s) Rth(j-c) PARAMETER thermal resistance from junction to solder point thermal resistance from junction to case VALUE 15 23 UNIT K/W K/W 1999 Aug 24 10 Philips Semiconductors Preliminary specification SDH/SONET STM4/OC12 laser drivers TZA3001AHL; TZA3001BHL; TZA3001U CHARACTERISTICS VCC = 5 V; Tamb = -40 to +85 C; all voltages measured with respect to GND. SYMBOL Supply VCC ICC Ptot Vi(p-p) VIO VI(min) VI(max) Zi supply voltage supply current total power dissipation note 1 note 2 4.75 - - 100 -25 - for low frequencies; single-ended 8 5 65 430 5.25 90 810 V mA mW PARAMETER CONDITIONS MIN. TYP. MAX. UNIT Data inputs: pins DIN and DINQ (and pins DLOOP and DLOOPQ on TZA3001BHL); see Fig.5 input voltage (peak-to-peak value) input offset voltage minimum input voltage maximum input voltage input impedance differential 250 - - 10 800 +25 - 12 mV mV V k VCC(R) - 2 - VCC(R) + 0.25 V CMOS inputs: pin ALS (and pin ENL on TZA3001BHL) VIL VIH Rpd(ALS) Rpd(ENL) LOW-level input voltage HIGH-level input voltage internal pull-down resistance on pin ALS internal pull-down resistance on pin ENL IOH = -200 A IOH = 200 A - 3.5 21 15 - - 25.5 25 1.5 - 30 35 V V k k CMOS output: pin ALARM (on TZA3001AHL) VOL VOH VI IMPD CMPD Iref(ONE) Vref(ONE) Iref(ZERO) Vref(ZERO) VTONE gm(TONE) VTZERO gm(TZERO) LOW-level output voltage HIGH-level output voltage 0 4.8 - - 1.8 - - - - -1.5 - -1.5 - 100 - 160 0.2 5 V V Monitor photodiode input: pin MONIN DC input voltage monitor photodiode current monitor photodiode capacitance laser optical `0' laser optical `1' note 3 Control loop reference currents: pins ONE and ZERO reference current on pin ONE reference voltage on pin ONE reference current on pin ZERO reference voltage on pin ZERO note 4 referenced to VCC(R) note 4 referenced to VCC(R) floating output note 5 floating output note 6 6 -1.55 6 -1.55 1.4 - 1.4 - 65 -1.45 65 -1.45 3.4 - 3.4 - A V A V 1.5 24 96 30 2.0 260 1040 50 V A A pF Control loop time constants: pins TONE and TZERO voltage on pin TONE transconductance of pin TONE voltage on pin TZERO transconductance of pin TZERO V mA/V V mA/V 1999 Aug 24 11 Philips Semiconductors Preliminary specification SDH/SONET STM4/OC12 laser drivers TZA3001AHL; TZA3001BHL; TZA3001U MIN. TYP. - - - 120 120 - MAX. UNIT SYMBOL PARAMETER CONDITIONS Laser modulation outputs: pins LA and LAQ IO IO(off) VO tr tf Jo(p-p) modulation output current output current during laser shutdown output voltage current rise time current fall time intrinsic electrical output jitter (peak-to-peak value) note 8 note 8 note 9 note 7 3 - 2 - - - 60 10 5 300 300 50 mA A V ps ps mUI Bias current output: pin BIAS IO IO(off) tres(off) VO Iref(ALARMLO) Vref(ALARMLO) Iref(ALARMHI) Vref(ALARMHI) Notes 1. Remarks to the supply current: a) The value for ICC does not include the modulation and bias currents through pins LA, LAQ and BIAS. b) Typical value for ICC refers to, but does not include, IMOD = 30 mA and IBIAS = 45 mA. c) The maximum value of ICC refers to, but does not include, IMOD = 60 mA and IBIAS = 90 mA. 2. Remarks to the power dissipation: a) The value for Ptot includes the modulation and bias currents through pins LA, LAQ and BIAS. b) The typical value for Ptot is the on-chip dissipation with IMOD = 30 mA and VLA = VLAQ = 2 V, IBIAS = 45 mA and VBIAS = 1 V and typical process parameters. c) The maximum value for Ptot is the on-chip dissipation with IMOD = 60 mA and VLA = VLAQ = 2 V, IBIAS = 90 mA and VBIAS = 1 V and worst case process parameters. 3. The minimum value of the capacitance on pin MONIN is required to prevent instability. 4. The reference currents can be set using a resistor connected between pins ONE or ZERO and VCC (see Section "Automatic laser control"). The corresponding ZERO level MPD current range is from 24 to 260 A. The ONE level MPD current range is from 96 to 1040 A. 5. The specified transconductance is the ratio between the modulation current at pins LA or LAQ and the voltage at pin TONE, under small signal conditions. 1999 Aug 24 12 output current output current during laser shutdown response time after laser shutdown output voltage IBIAS = 90 mA; note 11 note 10 2.5 - - 1 - - - - - -1.5 - -1.5 90 10 1 5 mA A s V A V A V Alarm threshold inputs: pin ALARMHI and ALARMLO (on TZA3001AHL) threshold reference current on pin ALARMLO optical reference voltage on pin ALARMLO threshold reference current on pin ALARMHI optical reference voltage on pin ALARMHI lower alarm; note 12 referenced to VCC(R) higher alarm; note 12 referenced to VCC(R) 6 -1.55 6 -1.55 65 -1.45 65 -1.45 Philips Semiconductors Preliminary specification SDH/SONET STM4/OC12 laser drivers TZA3001AHL; TZA3001BHL; TZA3001U 6. The specified transconductance is the ratio between the biasing current at pin BIAS and the voltage at pin TZERO, under small signal conditions. 7. The values indicate the guaranteed interval, i.e. the lowest attainable output current is always lower than 3 mA and the highest output current always higher than 60 mA. 8. The voltage rise and fall times can be larger, due to capacitive effects. Specifications are guaranteed by design and characterization. Each device is tested at full operating speed to guarantee the RF functionality. 9. Measured in a frequency band from 250 kHz to 5 MHz, according to "ITU-T Recommendation G.813". The electrically generated (current) jitter is assumed to be less than 50% of the optical output jitter. The specification is guaranteed by design. 10. The values indicate the guaranteed interval, i.e. the lowest output current always is less than 2.5 mA and the highest output current is always more than 90 mA. 11. The response time is defined as the delay between the onset of the ramp on pin ALS (at 10% of the HIGH-level) and the extinction of the bias current (at 10% of the original value). 12. The reference currents can be set by using a resistor between VCC(R) and pins ALARMLO or ALARMHI; see Section "Bias alarm for TZA3001AHL" for detailed information. The corresponding range of low-bias thresholds is between 1.8 and 19.5 mA. The high-bias threshold range is from 9 to 97.5 mA. handbook, full pagewidth VI(max) VCC(R) Vi(p-p) VIO VI(min) MGK274 Fig.5 Logic level symbol definitions for data inputs. 1999 Aug 24 13 Philips Semiconductors Preliminary specification SDH/SONET STM4/OC12 laser drivers APPLICATION INFORMATION TZA3001AHL; TZA3001BHL; TZA3001U L1 handbook, full pagewidth C1 1 F L2 C3 1 F L3 C5 1 F C2 22 nF VCC C4 22 nF C6 22 nF 4 C7(1) MONIN C8(2) 2 data inputs normal mode (CML/PECL compatible) DINQ 29 DIN ALARM 26 23 22 ZERO ONE R1(4) R2(4) R3(5) R4(5) VCC(G) VCC(B) VCC(R) ALS 7 10 19, 20, 27, 30 31 28 TONE 4 5 6 1, 3, 8, 9, 11, 14, 16, 17, 24, 25, 32 GND 11 C9(3) TZERO C10 BGAP TZA3001AHL 21 18 15 BIAS R5 18 L1 C11 MGK276 ALARMLO ALARMHI 22 nF 13 LA 12 LAQ Z1(6) MPD laser (1) (2) (3) (4) (5) (6) C7 is required to meet the minimum capacitance value on pin MONIN (optional, see Section "Automatic laser control"). C8 enhances modulation control loop time constant (optional). C9 enhances bias control loop time constant (optional). R1 and R2 are used for optical ZERO and ONE reference currents setting (see Section "Automatic laser control"). R3 and R4 are used for minimum and maximum bias currents setting (see Section "Bias alarm for TZA3001AHL"). Z1 is required for balancing the output stage (see Section "Power supply connections"). Fig.6 Application diagram showing the TZA3001AHL configured for 622 Mbits/s (STM4/OC12). 1999 Aug 24 14 Philips Semiconductors Preliminary specification SDH/SONET STM4/OC12 laser drivers TZA3001AHL; TZA3001BHL; TZA3001U L1 handbook, full pagewidth C1 1 F L2 C3 1 F L3 C5 1 F C2 22 nF VCC C4 22 nF C6 22 nF 4 C7(1) MONIN C8(2) 2 data inputs normal mode (CML/PECL compatible) DINQ 29 DIN ENL 26 23 22 ZERO ONE R1(4) R2(4) VCC(G) VCC(B) VCC(R) ALS 7 10 18, 21, 27, 30 31 28 TONE 4 5 6 1, 3, 8, 9, 11, 14, 16, 17, 24, 25, 32 GND 11 C9(3) TZERO C10 BGAP TZA3001BHL 20 19 15 BIAS R3 18 L1 C11 MGK275 DLOOPQ DLOOP 22 nF loop mode inputs (CML/PECL compatible) 13 LA 12 LAQ Z1(5) MPD laser (1) (2) (3) (4) (5) C7 is required to meet the minimum capacitance value on pin MONIN (optional, see Section "Automatic laser control"). C8 enhances modulation control loop time constant (optional). C9 enhances bias control loop time constant (optional). R1 and R2 are used for optical ZERO and ONE reference currents setting (see Section "Automatic laser control"). Z1 is required for balancing the output stage (see Section "Power supply connections"). Fig.7 Application diagram showing the TZA3001BHL configured for 622 Mbits/s (STM4/OC12). 1999 Aug 24 15 Philips Semiconductors Preliminary specification SDH/SONET STM4/OC12 laser drivers BONDING PADS COORDINATES(1) SYMBOL GND MONIN GND IGM TONE TZERO BGAP VCC(G) VCC(G) GND GND VCC(B) VCC(B) GND LAQ LA GND BIAS GND GND GND ALARMHI PAD X 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 -664 -524 -367 -227 -70 +87 +244 +384 +524 +664 +910 +910 +910 +910 +910 +910 +910 +910 +910 +910 +681 +541 Y -910 -910 -910 -910 -910 -910 -910 -910 -910 -910 -630 -490 -350 -210 -70 +70 +210 +350 +490 +630 +910 +910 VCC(R) DLOOP DLOOPQ VCC(R) TZA3001AHL; TZA3001BHL; TZA3001U COORDINATES(1) SYMBOL PAD X 23 24 25 26 27 28 29 30 31 32 33 34 35 36 37 38 39 40 +384 +227 +87 -70 -210 -367 -524 -681 -910 -910 -910 -910 -910 -910 -910 -910 -910 -910 Y +910 +910 +910 +910 +910 +910 +910 +910 +681 +541 +384 +227 +70 -70 -227 -367 -551 -664 ALARMLO ONE ZERO GND GND ALARM ENL VCC(R) DIN DINQ VCC(R) ALS GND GND Note 1. All x and y coordinates represent the position of the centre of the pad in m with respect to the centre of the die (see Fig.8). 1999 Aug 24 16 Philips Semiconductors Preliminary specification SDH/SONET STM4/OC12 laser drivers TZA3001AHL; TZA3001BHL; TZA3001U handbook, full pagewidth ALARMLO 2 mm(1) ALARMHI 22 DLOOPQ DLOOP VCC(R) VCC(R) GND 21 20 19 18 17 16 GND GND BIAS GND LA LAQ GND VCC(B) VCC(B) GND 2 mm(1) 15 14 13 12 11 10 GND MGL192 ZERO 29 GND 30 GND ALARM ENL VCC(R) DIN DINQ VCC(R) ALS GND GND 31 32 33 34 35 28 ONE 27 26 25 24 23 x 36 37 38 39 40 1 GND 2 MONIN 3 GND 4 IGM 0 0 y TZA3001U 5 TONE 6 TZERO 7 BGAP 8 VCC(G) 9 VCC(G) (1) Typical value. Fig.8 Bonding pad locations of TZA3001U. Table 1 Physical characteristics of bare die VALUE 2.1 m PSG (PhosphoSilicate Glass) on top of 0.7 m silicon nitride minimum dimension of exposed metallization is 90 x 90 m (pad size = 100 x 100 m) 1.2 m AlCu (1% Cu) 380 m nominal 2.000 x 2.000 mm (4.000 mm2) silicon; electrically connected to GND potential through substrate contacts <430 C; recommended die attache is glue <15 s PARAMETER Glass passivation Bonding pad dimension Metallization Thickness Size Backing Attache temperature Attache time 1999 Aug 24 17 Philips Semiconductors Preliminary specification SDH/SONET STM4/OC12 laser drivers PACKAGE OUTLINE TZA3001AHL; TZA3001BHL; TZA3001U LQFP32: plastic low profile quad flat package; 32 leads; body 5 x 5 x 1.4 mm SOT401-1 c y X 24 25 17 16 ZE A e E HE wM bp 32 1 8 9 L detail X Lp A A2 A1 pin 1 index (A 3) e bp D HD ZD wM B vM A vM B 0 2.5 scale 5 mm DIMENSIONS (mm are the original dimensions) UNIT mm A max. 1.60 A1 0.15 0.05 A2 1.5 1.3 A3 0.25 bp 0.27 0.17 c 0.18 0.12 D (1) 5.1 4.9 E (1) 5.1 4.9 e 0.5 HD 7.15 6.85 HE 7.15 6.85 L 1.0 Lp 0.75 0.45 v 0.2 w 0.12 y 0.1 Z D (1) Z E (1) 0.95 0.55 0.95 0.55 7 0o o Note 1. Plastic or metal protrusions of 0.25 mm maximum per side are not included. OUTLINE VERSION SOT401-1 REFERENCES IEC JEDEC EIAJ EUROPEAN PROJECTION ISSUE DATE 95-12-19 97-08-04 1999 Aug 24 18 Philips Semiconductors Preliminary specification SDH/SONET STM4/OC12 laser drivers SOLDERING Introduction to soldering surface mount packages This text gives a very brief insight to a complex technology. A more in-depth account of soldering ICs can be found in our "Data Handbook IC26; Integrated Circuit Packages" (document order number 9398 652 90011). There is no soldering method that is ideal for all surface mount IC packages. Wave soldering is not always suitable for surface mount ICs, or for printed-circuit boards with high population densities. In these situations reflow soldering is often used. Reflow soldering Reflow soldering requires solder paste (a suspension of fine solder particles, flux and binding agent) to be applied to the printed-circuit board by screen printing, stencilling or pressure-syringe dispensing before package placement. Several methods exist for reflowing; for example, infrared/convection heating in a conveyor type oven. Throughput times (preheating, soldering and cooling) vary between 100 and 200 seconds depending on heating method. Typical reflow peak temperatures range from 215 to 250 C. The top-surface temperature of the packages should preferable be kept below 230 C. Wave soldering Conventional single wave soldering is not recommended for surface mount devices () or printed-circuit boards with a high component density, as solder bridging and non-wetting can present major problems. To overcome these problems the double-wave soldering method was specifically developed. TZA3001AHL; TZA3001BHL; TZA3001U If wave soldering is used the following conditions must be observed for optimal results: * Use a double-wave soldering method comprising a turbulent wave with high upward pressure followed by a smooth laminar wave. * For packages with leads on two sides and a pitch (e): - larger than or equal to 1.27 mm, the footprint longitudinal axis is preferred to be parallel to the transport direction of the printed-circuit board; - smaller than 1.27 mm, the footprint longitudinal axis must be parallel to the transport direction of the printed-circuit board. The footprint must incorporate solder thieves at the downstream end. * For packages with leads on four sides, the footprint must be placed at a 45 angle to the transport direction of the printed-circuit board. The footprint must incorporate solder thieves downstream and at the side corners. During placement and before soldering, the package must be fixed with a droplet of adhesive. The adhesive can be applied by screen printing, pin transfer or syringe dispensing. The package can be soldered after the adhesive is cured. Typical dwell time is 4 seconds at 250 C. A mildly-activated flux will eliminate the need for removal of corrosive residues in most applications. Manual soldering Fix the component by first soldering two diagonally-opposite end leads. Use a low voltage (24 V or less) soldering iron applied to the flat part of the lead. Contact time must be limited to 10 seconds at up to 300 C. When using a dedicated tool, all other leads can be soldered in one operation within 2 to 5 seconds between 270 and 320 C. 1999 Aug 24 19 Philips Semiconductors Preliminary specification SDH/SONET STM4/OC12 laser drivers TZA3001AHL; TZA3001BHL; TZA3001U Suitability of surface mount IC packages for wave and reflow soldering methods SOLDERING METHOD PACKAGE WAVE BGA, SQFP PLCC(3), SO, SOJ LQFP, QFP, TQFP SSOP, TSSOP, VSO Notes 1. All surface mount (SMD) packages are moisture sensitive. Depending upon the moisture content, the maximum temperature (with respect to time) and body size of the package, there is a risk that internal or external package cracks may occur due to vaporization of the moisture in them (the so called popcorn effect). For details, refer to the Drypack information in the "Data Handbook IC26; Integrated Circuit Packages; Section: Packing Methods". 2. These packages are not suitable for wave soldering as a solder joint between the printed-circuit board and heatsink (at bottom version) can not be achieved, and as solder may stick to the heatsink (on top version). 3. If wave soldering is considered, then the package must be placed at a 45 angle to the solder wave direction. The package footprint must incorporate solder thieves downstream and at the side corners. 4. Wave soldering is only suitable for LQFP, TQFP and QFP packages with a pitch (e) equal to or larger than 0.8 mm; it is definitely not suitable for packages with a pitch (e) equal to or smaller than 0.65 mm. 5. Wave soldering is only suitable for SSOP and TSSOP packages with a pitch (e) equal to or larger than 0.65 mm; it is definitely not suitable for packages with a pitch (e) equal to or smaller than 0.5 mm. not suitable suitable(2) recommended(3)(4) recommended(5) suitable not not suitable suitable suitable suitable suitable HLQFP, HSQFP, HSOP, HTSSOP, SMS not REFLOW(1) 1999 Aug 24 20 Philips Semiconductors Preliminary specification SDH/SONET STM4/OC12 laser drivers DEFINITIONS Data sheet status Objective specification Preliminary specification Product specification Limiting values TZA3001AHL; TZA3001BHL; TZA3001U This data sheet contains target or goal specifications for product development. This data sheet contains preliminary data; supplementary data may be published later. This data sheet contains final product specifications. Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. BARE DIE DISCLAIMER All die are tested and are guaranteed to comply with all data sheet limits up to the point of wafer sawing for a period of ninety (90) days from the date of Philips' delivery. If there are data sheet limits not guaranteed, these will be separately indicated in the data sheet. There is no post waffle pack testing performed on individual die. Although the most modern processes are utilized for wafer sawing and die pick and place into waffle pack carriers, Philips Semiconductors has no control of third party procedures in the handling, packing or assembly of the die. Accordingly, Philips Semiconductors assumes no liability for device functionality or performance of the die or systems after handling, packing or assembly of the die. It is the responsibility of the customer to test and qualify their application in which the die is used. 1999 Aug 24 21 Philips Semiconductors - a worldwide company Argentina: see South America Australia: 3 Figtree Drive, HOMEBUSH, NSW 2140, Tel. +61 2 9704 8141, Fax. +61 2 9704 8139 Austria: Computerstr. 6, A-1101 WIEN, P.O. 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Box 1041, AUCKLAND, Tel. +64 9 849 4160, Fax. +64 9 849 7811 Norway: Box 1, Manglerud 0612, OSLO, Tel. +47 22 74 8000, Fax. +47 22 74 8341 Pakistan: see Singapore Philippines: Philips Semiconductors Philippines Inc., 106 Valero St. Salcedo Village, P.O. Box 2108 MCC, MAKATI, Metro MANILA, Tel. +63 2 816 6380, Fax. +63 2 817 3474 Poland: Ul. Lukiska 10, PL 04-123 WARSZAWA, Tel. +48 22 612 2831, Fax. +48 22 612 2327 Portugal: see Spain Romania: see Italy Russia: Philips Russia, Ul. Usatcheva 35A, 119048 MOSCOW, Tel. +7 095 755 6918, Fax. +7 095 755 6919 Singapore: Lorong 1, Toa Payoh, SINGAPORE 319762, Tel. +65 350 2538, Fax. +65 251 6500 Slovakia: see Austria Slovenia: see Italy South Africa: S.A. PHILIPS Pty Ltd., 195-215 Main Road Martindale, 2092 JOHANNESBURG, P.O. Box 58088 Newville 2114, Tel. +27 11 471 5401, Fax. +27 11 471 5398 South America: Al. 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Nr. 28 81260 Umraniye, ISTANBUL, Tel. +90 216 522 1500, Fax. +90 216 522 1813 Ukraine: PHILIPS UKRAINE, 4 Patrice Lumumba str., Building B, Floor 7, 252042 KIEV, Tel. +380 44 264 2776, Fax. +380 44 268 0461 United Kingdom: Philips Semiconductors Ltd., 276 Bath Road, Hayes, MIDDLESEX UB3 5BX, Tel. +44 208 730 5000, Fax. +44 208 754 8421 United States: 811 East Arques Avenue, SUNNYVALE, CA 94088-3409, Tel. +1 800 234 7381, Fax. +1 800 943 0087 Uruguay: see South America Vietnam: see Singapore Yugoslavia: PHILIPS, Trg N. Pasica 5/v, 11000 BEOGRAD, Tel. +381 11 62 5344, Fax.+381 11 63 5777 For all other countries apply to: Philips Semiconductors, International Marketing & Sales Communications, Building BE-p, P.O. Box 218, 5600 MD EINDHOVEN, The Netherlands, Fax. +31 40 27 24825 (c) Philips Electronics N.V. 1999 Internet: http://www.semiconductors.philips.com SCA 67 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights. Printed in The Netherlands 465012/02/pp24 Date of release: 1999 Aug 24 Document order number: 9397 750 05282 |
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